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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1531 description collector-emitter breakdown voltage- : v (br)ceo = 40v(min) good linearity of h fe low collector saturation voltage applications designed for af output amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 5 v i c collector current-continuous 2 a i cp collector current-peak 4 a collector power dissipation @ t c =25 5 p c collector power dissipation @ t a =25 1.2 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1531 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)cbo collector-base breakdown voltage i c = 1ma; i e = 0 50 v v (br)ceo collector-emitter breakdown voltage i c = 2ma; i b = 0 b 40 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 0.3a b 1.0 v v be( sat ) base-emitter saturation voltage i c = 2a; i b = 0.2a b 1.5 v i cbo collector cutoff current v cb = 50v; i e = 0 1.0 a i ceo collector cutoff current v ce = 10v; i b = 0 b 100 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe dc current gain i c = 1a; v ce = 5v 50 220 f t current-gain?bandwidth product i c = 0.5a; v ce = 5v 150 mhz c ob collector output capacitance i e = 0; v cb = 20v; f= 1mhz 20 pf ? h fe classifications p q r 50-100 80-160 120-220 isc website www.iscsemi.cn 2 |
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